Hot Paper - Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites

Flexible Diodes/Transistors Based on Tunable p-n-Type Semiconductivity in Graphene/Mn-Co-Ni-O Nanocomposites

基于石墨烯/Mn-Co-Ni-O纳米复合材料中可调p-n型半导体的柔性二极管/晶体管
グラフェン/ Mn-Co-Ni-Oナノコンポジットの調整可能なp-n型半導体性に基づくフレキシブルダイオード/トランジスタ
그래핀/Mn-Co-Ni-O 나노복합체에서 조정 가능한 p-n-형 반도체를 기반으로 하는 유연한 다이오드/트랜지스터
Diodos / transistores flexibles basados en semiconductividad sintonizable tipo p-n en nanocompuestos de grafeno / Mn-Co-Ni-O
Diodes/transistors flexibles basés sur une semiconductivité de type p-n accordable dans des nanocomposites graphène/Mn-Co-Ni-O
Гибкие диоды / транзисторы на основе перестраиваемой полупроводимости p-n-типа в нанокомпозитах графен / Mn-Co-Ni-O

Lihong Su 苏力宏 ¹ ², Zhou Yang 杨周 ³, Xitong Wang 王锡桐 ¹ ², Ziao Zou 邹子翱 ¹, Bo Wang 王波 ¹ ⁴, Gary Hodes ⁵, Ninghui Chang 常宁辉 ¹, Yongyong Suo ¹ ⁴, Zhibo Ma 马志波 ¹ ⁶, Haoxu Wang ³ ⁷, Yucheng Liu 刘渝城 ³, Junping Zhang 张军平 ¹, Shuanhu Wang 王拴虎 ¹ ⁸, Yuefei Li 李越飞 ¹ ², Fengxia Yang 杨凤霞 ¹ ², Jixin Zhu 朱纪欣 ⁹, Fei Gao 高斐 ³, Wei Huang 黄维 ¹ ⁹, Shengzhong Liu 刘生忠 ³

¹ School of Chemistry and Chemical-Engineering, Northwestern Polytechnical University, Xi'an, 710129 Shaanxi, China
中国陕西西安西北工业大学化学与化工学院
² Dongguan Sanhang Civil-Military Integration Innovation Institute, Dongguan, 52300 Guangdong, China
中国广东东莞东莞市三航军民融合创新研究院
³ Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education; Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology; Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, China
中国西安应用表面与胶体化学教育部重点实验室陕西省能源新材料与器件重点实验室陕西省能源新技术工程实验室新能源材料研究所陕西师范大学材料科学与工程学院
⁴ School of Aeronautics, Northwestern Polytechnical University, Xi'an, 710072 Shaanxi, China
中国陕西西安西北工业大学航空学院
⁵ Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel
⁶ Key Lab of Micro/Nano Systems for Aerospace, Ministry of Education, Northwestern Polytechnical University, Xi'an, 710129 Shaanxi, China
中国陕西西安西北工业大学空天微纳系统教育部重点实验室
⁷ University of Queensland, Australian Institute for Bioengineering & Nanotechnology, Nanomaterials Centre, St. Lucia, Qld, Australia
⁸ School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an, 710129 Shaanxi, China
中国陕西西安西北工业大学物理科学与技术学院
⁹ Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710129 Shaanxi, China
中国陕西西安西北工业大学柔性电子研究院

https://doi.org/10.34133/2021/9802795

https://spj.sciencemag.org/journals/research/2021/9802795/

Research, 13 October 2021

Abstract

We report a novel Mn-Co-Ni-O (MCN) nanocomposite in which the p-type semiconductivity of Mn-Co-Ni-O can be manipulated by addition of graphene. With an increase of graphene content, the semiconductivity of the nanocomposite can be tuned from p-type through electrically neutral to n-type.

The very low effective mass of electrons in graphene facilitates electron tunneling into the MCN, neutralizing holes in the MCN nanoparticles. XPS analysis shows that the multivalent manganese ions in the MCN nanoparticles are chemically reduced by the graphene electrons to lower-valent states. Unlike traditional semiconductor devices, electrons are excited from the filled graphite band into the empty band at the Dirac points from where they move freely in the graphene and tunnel into the MCN.

The new composite film demonstrates inherent flexibility, high mobility, short carrier lifetime, and high carrier concentration. This work is useful not only in manufacturing flexible transistors, FETs, and thermosensitive and thermoelectric devices with unique properties but also in providing a new method for future development of 2D-based semiconductors.

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