Overcoming challenges in InP-based quantum dots: from nucleation mechanisms to high-performance quantum dot light-emitting diodes
克服基于磷化铟（InP）量子点的挑战：从成核机制到高性能量子点发光二极管
InPベースの量子ドットにおける課題の克服：核生成メカニズムから高性能量子ドット発光ダイオードへ
InP 기반 양자점의 도전 극복: 핵생성 메커니즘부터 고성능 양자점 발광 다이오드까지
Superando los desafíos en los puntos cuánticos basados en InP: desde los mecanismos de nucleación hasta los diodos emisores de luz de puntos cuánticos de alto rendimiento
Surmonter les défis des points quantiques à base d'InP : des mécanismes de nucléation aux diodes électroluminescentes à points quantiques haute performance
Победа над вызовами в квантовых точках на основе InP: от механизмов нуклеации до высокопроизводительных квантово-точечных светодиодов
Yangyang Bian ¹, Qian Li ¹, Fei Chen ², Chunhe Yang ¹, Huaibin Shen ², Aiwei Tang ¹
¹ Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
中国 北京 北京交通大学物理科学与工程学院 发光与光信息技术教育部重点实验室
² Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, School of Nanoscience and Materials Engineering, Henan University, Kaifeng 475004, China
中国 开封 河南大学纳米科学与材料工程学院 高效显示与照明技术国家地方联合工程研究中心 特种功能材料教育部重点实验室
Indium phosphide-based quantum dots (InP-based QDs) have emerged as promising candidates for next-generation display and optoelectronic technologies, offering exceptional photoluminescent (PL) properties including high efficiency, narrow emission spectra, and precisely tunable wavelengths. Nevertheless, their widespread commercialization encounters substantial obstacles, primarily stemming from persistent challenges in synthetic control and material processing.
Critical performance parameters—including photoluminescence quantum yield (PL QY, currently<90% for most systems), emission linewidth (typically>35 nm) as well as external quantum efficiency (EQE) and operational stability of device—continue to show only incremental improvements, highlighting the urgent need for fundamental breakthroughs in QDs synthesis, surface engineering and device optimization. This review systematically examines the nucleation mechanisms governing InP core formation and outlines key strategies for optimizing InP-based core/shell QDs.
Furthermore, we present a comprehensive analysis of recent breakthroughs in red, green, and blue-emitting InP-based QD light-emitting diodes (QLEDs) development, focusing on modulation of charge transport engineering and suppression of charge leakage. Finally, we critically evaluate the remaining commercialization challenges and future prospects for InP-based QLEDs in next-generation display and optoelectronic technologies, outlining potential pathways for overcoming current limitations.
