ITO-free silicon-integrated perovskite electrochemical cell for light-emission and light-detection
用于发光和光检测的无ITO硅集成钙钛矿电化学电池
発光と光検出のためのITOフリーシリコン集積ペロブスカイト電気化学電池
발광 및 광 감지를 위한 ITO 없는 실리콘 통합 칼슘 티타늄 광화학 전지
Baterías electroquímicas de Perovskita integradas de silicio sin Ito para detección luminosa y luminosa
Cellule électrochimique pérovskite intégrée sans Ito silicium pour la détection lumineuse et lumineuse
Электрохимические элементы из перовскита без ITO - кремния для люминесцентного и светового обнаружения
Maria Baeva ¹ ² ³, Dmitry Gets ², Artem Polushkin ², Aleksandr Vorobyov ¹, Aleksandr Goltaev ¹, Vladimir Neplokh ¹ ⁴, Alexey Mozharov ¹, Dmitry V. Krasnikov ⁵, Albert G. Nasibulin ⁵, Ivan Mukhin ¹ ⁴, Sergey Makarov ² ⁶
¹ Alferov University, Khlopina 8/3, St. Petersburg 194021, Russia
² Department of Physics and Engineering, ITMO University, Lomonosova 9, St. Petersburg 197101, Russia
³ Institute of Automation and Control Processes (IACP), Far Eastern Branch of Russian Academy of Sciences, Ulitsa Radio 5, Vladivostok 690041, Primorsky Krai, Russia
⁴ Peter the Great St. Petersburg Polytechnic University, Polytechnicheskaya 29, St. Petersburg 195251, Russia
⁵ Skolkovo Institute of Science and Technology, Nobel 3, Moscow 121205, Russia
⁶ Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao 266000, China
中国 青岛 哈尔滨工程大学青岛创新发展基地
Halide perovskite light-emitting electrochemical cells are a novel type of the perovskite optoelectronic devices that differs from the perovskite light-emitting diodes by a simple monolayered architecture. Here, we develop a perovskite electrochemical cell both for light emission and detection, where the active layer consists of a composite material made of halide perovskite microcrystals, polymer support matrix, and added mobile ions.
The perovskite electrochemical cell of CsPbBr3:PEO:LiTFSI composition, emitting light at the wavelength of 523 nm, yields the luminance more than 7000 cd/m2 and electroluminescence efficiency of 1.3×105 lm/W. The device fabricated on a silicon substrate with transparent single-walled carbon nanotube film as a top contact exhibits 40% lower Joule heating compared to the perovskite optoelectronic devices fabricated on conventional ITO/glass substrates.
Moreover, the device operates as a photodetector with a sensitivity up to 0.75 A/W, specific detectivity of 8.56×1011 Jones, and linear dynamic range of 48 dB. The technological potential of such a device is proven by demonstration of 24-pixel indicator display as well as by successful device miniaturization by creation of electroluminescent images with the smallest features less than 50 μm.
