High fiber-to-fiber net gain in erbium-doped thin film lithium niobate waveguide amplifier as an external gain chip
作为外部增益芯片的掺铒薄膜铌酸锂波导放大器具有较高的光纤到光纤净增益
エルビウムドープ薄膜リチウムニオブ酸波導増幅器における高ファイバー間ネットゲインを外部増幅チップとして
에르븀 도핑된 얇은 막 리튬 나이오베이트 도파관 증폭기에서 외부 이득 칩으로서의 높은 섬유 간 순 이득
Alto ganancia neta de fibra a fibra en el amplificador de guía de ondas de niobato de litio en película delgada dopado con erbio como chip de ganancia externo
Gain net élevé fibre à fibre dans un amplificateur à guide d'ondes à film mince de niobate de lithium dopé à l'erbium en tant que puce de gain externe
Высокий чистый коэффициент усиления между волокнами в волноводном усилителе из эрбиевого легированного тонкопленочного литий-нитрата в качестве внешнего усилительного чипа
Jinli Han ¹ ², Mengqi Li ², Rongbo Wu 伍荣波 ², Jianping Yu 于建平 ², Lang Gao 高浪 ³, Zhiwei Fang 方致伟 ², Min Wang 汪旻 ², Youting Liang 梁友亭 ², Haisu Zhang 张海粟 ², Ya Cheng 程亚 ¹ ² ³ ⁴ ⁵ ⁶ ⁷
¹ State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
中国 上海 华东师范大学 精密光谱科学与技术国家重点实验室
² The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Sciences, East China Normal University, Shanghai 200241, China
中国 上海 华东师范大学物理与电子科学学院 极端光机电实验室
³ State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China
中国 上海 中国科学院上海光学精密机械研究所 强场激光物理国家重点实验室 超强激光科学卓越创新中心
⁴ Hefei National Laboratory, Hefei 230088, China
中国 合肥 合肥国家实验室
⁵ Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
中国 上海 上海量子科学研究中心
⁶ Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China
中国 太原 山西大学 极端光学协同创新中心
⁷ Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan 250358, China
中国 济南 山东师范大学 光场调控及应用协同创新中心
Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band. In this work, an erbium-doped thin film lithium niobate waveguide amplifier achieving >10 dB off-chip (fiber-to-fiber) net gain and >20 mW fiber-output amplified power is demonstrated, thanks to the low-propagation-loss waveguides and robust waveguide edge-couplers prepared by the photolithography assisted chemomechanical etching technique.
Systematic investigation on the fabricated waveguide amplifiers reveals remarkable optical gain around the peak wavelength of 1532 nm as well as the low fiber-coupling loss of −1.2 dB/facet. A fiber Bragg-grating based waveguide laser is further demonstrated using the fabricated waveguide amplifier as the external gain chip, which generates >2 mW off-chip power continuous-wave lasing around the gain peak at 1532 nm.
The unambiguous demonstration of fiber-to-fiber net gain of the erbium-doped thinfilm lithium niobate (TFLN) waveguide amplifier as well as its external gain chip application will benefit diverse fields demanding scalable gain elements with high-speed tunability.
