Ultra-sensitive multi-band infrared polarization photodetector based on 1T'-MoTe₂/2H-MoTe₂ van der Waals heterostructure
基于1T'-MoTe₂/2H-MoTe₂范德华异质结构的超灵敏多波段红外偏振光电探测器
1T'-MoTe₂/2H-MoTe₂ファンデルワールスヘテロ構造に基づく超感度マルチバンド赤外線偏光光検出器
1T'-MoTe₂/2H-MoTe₂ 반데르발스 이종구조 기반 초고감도 다중 대역 적외선 편광 광검출기
Fotodetector polarizado infrarrojo multibanda ultra sensible basado en heteroestructura de van der Waals 1T'-MoTe₂/2H-MoTe₂
Détecteur de lumière polarisation infrarouge multi-band ultra-sensible basé sur l'hétérostructure van der Waals 1T'-MoTe₂/2H-MoTe₂
Ультрачувствительный многочастотный инфракрасный поляризационный фотодетектор на основе ван-дер-ваальсовой гетероструктуры 1T'-MoTe₂/2H-MoTe₂
Yuting Pan ¹ ³, Lidan Lu ¹, Bofei Zhu ², Chunhua An ⁴, Jing Yu ¹, Guanghui Ren ⁵, Jian Zhen Ou ⁵, Mingli Dong ¹, Zheng You ², Lianqing Zhu ¹
¹ School of Instrument Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China
中国 北京 北京信息科技大学仪器科学与光电工程学院
² Department of Precision Instruments, Tsinghua University, Beijing 100084, China
中国 北京 清华大学机械工程学院精密仪器系
³ School of Opto-electronic Engineering, Changchun University of Science and Technology, Changchun 130022, China
中国 长春 长春理工大学光电工程学院
⁴ School of Precision Instruments and Optoelectronic Engineering, Tianjin University, Tianjin 300072, China
中国 天津 天津大学精密仪器与光电子工程学院
⁵ School of Engineering, RMIT University, Melbourne 3000, Australia
Near infrared polarized photodetectors are widely used, and van der Waals heterostructures based on transition metal dichalcogenides are important platforms for device research and application. Homologous polymorphic two-dimensional chalcogenides refer to two-dimensional chalcogenides with the same chemical composition but different crystal structures. Homologous polymorphic two-dimensional chalcogenides have shown great potential in near-infrared detection due to their unique bandgap characteristics, exciton effects, and controllable optoelectronic properties.
This paper studies a near-infrared polarized photodetector based on 1T'-MoTe₂/2H-MoTe₂ structure, in which the semimetallic 1T'-MoTe₂ has attracted attention due to its low work function and excellent electrical performance. 1T'-MoTe₂ and 2H-MoTe₂ form a favorable bandgap structure after forming a heterojunction, which improves carrier separation efficiency and photoelectric response. This device exhibits excellent high-sensitivity optoelectronic detection performance in the wideband region (532–2200 nm), such as significant high responsivity (3.06 A·W–1) under 1310 nm laser, specific detectivity (3.2 × 109 Jones), good external quantum efficiency (289%), and fast rise and decay response times of 10.56 ms/6.26 ms.
In addition, the device has polarization detection capability, achieving a high polarization sensitivity of 20.1. The device has successfully achieved imaging from visible light to near-infrared light, highlighting the potential of 1T'-MoTe₂/2H-MoTe₂ heterojunction as a polarization sensitive detector.
