Beyond Lambertian light trapping for large-area silicon solar cells: fabrication methods
대면적 실리콘 태양전지를 위한 Lambertian 광 포획을 넘어서: 제조 방법
Más allá de la captura de luz lambertiana para células solares de silicio de gran superficie: métodos de fabricación
Au-delà du piégeage de la lumière lambertienne pour les cellules solaires au silicium de grande surface : méthodes de fabrication
Помимо ламбертовского улавливания света для кремниевых солнечных элементов большой площади: методы изготовления
Jovan Maksimovic ¹, Jingwen Hu ¹, Soon Hock Ng ¹, Tomas Katkus ¹, Gediminas Seniutinas ¹, Tatiana Pinedo Rivera ², Michael Stuiber ², Yoshiaki Nishijima ³ ⁴, Sajeev John ⁵, Saulius Juodkazis ¹ ⁶
¹ Optical Sciences Centre and ARC Training Centre in Surface Engineering for Advanced Materials (SEAM), School of Science, Swinburne University of Technology, Hawthorn Vic 3122, Australia
² Melbourne Centre for Nanofabrication, ANFF Victoria, 151 Wellington Rd., Clayton Vic 3168 Australia
³ Department of Electrical and Computer Engineering, Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
⁴ Institute of Advanced Sciences, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
⁵ Department of Physics, University of Toronto, 60 St. George Street, Toronto, ON, M5S 1A7, Canada
⁶ World Research Hub Initiative (WRHI), School of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8550, Japan
Opto-Electronic Advances, 27 May 2022

Light trapping photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond the efficiency limit implied by the Lambertian limit of ray trapping ~ 29%. The interference and slow light effects are harnessed for collecting light even at the long wavelengths near the Si band-gap.

We compare two different methods for surface patterning, that can be extended to large area surface patterning: 1) laser direct write and 2) step-&-repeat 5× reduction projection lithography. Large area throughput limitations of these methods are compared with the established electron beam lithography (EBL) route, which is conventionally utilised but much slower than the presented methods.

Spectral characterisation of the PhC light trapping is compared for samples fabricated by different methods. Reflectance of Si etched via laser patterned mask was ~ 7% at visible wavelengths and was comparable with Si patterned via EBL made mask. The later pattern showed a stronger absorbance than the Lambertian limit. (M.-L. Hsieh et al., Sci. Rep. 10, 11857 (2020)).
Opto-Electronic Advances_1
Opto-Electronic Advances_2
Opto-Electronic Advances_3
Reviews and Discussions
High-intensity spatial-mode steerable frequency up-converter toward on-chip integration
Unraveling the efficiency losses and improving methods in quantum dot-based infrared up-conversion photodetectors
Ultrafast dynamics of femtosecond laser-induced high spatial frequency periodic structures on silicon surfaces
Optical scanning endoscope via a single multimode optical fiber
Simultaneously realizing thermal and electromagnetic cloaking by multi-physical null medium
Data-driven polarimetric imaging: a review
Robust measurement of orbital angular momentum of a partially coherent vortex beam under amplitude and phase perturbations
Deblurring, artifact-free optical coherence tomography with deconvolution-random phase modulation
Inverse design for material anisotropy and its application for a compact X-cut TFLN on-chip wavelength demultiplexer
Improved spatiotemporal resolution of anti-scattering super-resolution label-free microscopy via synthetic wave 3D metalens imaging
Flat soliton microcomb source
Smart palm-size optofluidic hematology analyzer for automated imaging-based leukocyte concentration detection

Previous Article                                Next Article
Copyright © Hot Paper