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Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode
AlGaN日盲紫外光电二极管中多量子阱诱导的单极载流子传输倍增
AlGaNソーラーブラインド紫外線フォトダイオードにおける多重量子井戸誘起単極キャリア輸送増倍
AlGaN 태양광 블라인드 자외선 포토다이오드에서 다중 양자 우물 유도 단극 캐리어 수송 곱셈
Multiplicación del transporte de portadores unipolares inducidos por pozos cuánticos múltiples en un fotodiodo ultravioleta ciego al sol de AlGaN
Multiplication de transport de porteurs unipolaires induite par plusieurs puits quantiques dans une photodiode ultraviolette aveugle au soleil AlGaN
Индуцированное множественными квантовыми ямами униполярное умножение транспорта носителей в солнечно-слепом ультрафиолетовом фотодиоде AlGaN
Long Guo 郭龙 ¹ ², Ke Jiang 蒋科 ¹ ², Xiaojuan Sun 孙晓娟 ¹ ², Zihui Zhang ¹ ³, Jianwei Ben 贲建伟 ¹ ², Yuping Jia 贾玉萍 ¹ ², Yong Wang 王永 ¹ ², Dabing Li 黎大兵 ¹ ²
¹ State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
中国 长春 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室
² Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
中国 北京 中国科学院大学 材料科学与光电子工程中心
³ Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
中国 天津 河北工业大学电子与信息工程学院 天津市电子材料与器件重点实验室
Photonics Research, 8 September 2021
Abstract

AlGaN solar-blind ultraviolet (SBUV) detectors have potential application in fire monitoring, corona discharge monitoring, or biological imaging. With the promotion of application requirements, there is an urgent demand for developing a high-performance vertical detector that can work at low bias or even zero bias.

In this work, we have introduced a photoconductive gain mechanism into a vertical AlGaN SBUV detector and successfully realized it in a p-i-n photodiode via inserting a multiple-quantum-well (MQW) into the depletion region. The MQW plays the role of trapping holes and increasing carrier lifetime due to its strong hole confinement effect and quantum confinement Stark effect. Hence, the electrons can go through the detector multiple times, inducing unipolar carrier transport multiplication.

Experimentally, an AlGaN SBUV detector with a zero-bias peak responsivity of about 0.425 A/W at 233 nm is achieved, corresponding to an external quantum efficiency of 226%, indicating the existence of internal current gain. When compared with the device without MQW structure, the gain is estimated to be about 10³ in magnitude. The investigation provides an alternative and effective approach to obtain high current gain in vertical AlGaN SBUV detectors at zero bias.
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