声子辅助吸收光电导开关
フォノン補助吸収光コンダクタンススイッチ
포논 지원 흡수 광전도 스위치
Interruptor fotoconductor de absorción asistida por fonones
Interrupteur photoconducteur à absorption assistée par phonon
Фононно-вспомогательный фотопроводящий переключатель поглощения
¹ School of Materials, Sun Yat-sen University, Shenzhen 518107, China
中国 深圳 中山大学材料学院
² Hangzhou Fujia Gallium Technology Company Limited, Hangzhou 311400, China
中国 杭州 杭州富加镓业科技有限公司
³ Shanghai Institute of Laser Plasma, China Academy of Engineering Physics, Shanghai 201899, China
中国 上海 中国工程物理研究院上海激光等离子体研究所
⁴ Advanced Laser and Optoelectronic Functional Materials Department, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
中国 上海 中国科学院上海光学精密机械研究所先进激光与光电功能材料部
⁵ Shanghai Key Laboratory of Wide and Ultra-Wide Bandgap Semiconductor Materials, Shanghai 201306, China
中国 上海 上海市宽禁带与超宽禁带半导体材料重点实验室
High-power microwave technology shows great promise for applications in low-altitude security systems such as countering non-cooperative unmanned aerial vehicles. However, conventional high-power photoconductive semiconductor switches (PCSSs) based on impurity absorption intrinsically fail to achieve high voltage conversion efficiency across different operating voltages, limiting their overall performance.
Here, we propose a novel PCSS based on phonon-assisted absorption, which fundamentally breaks the efficiency bottleneck and enables voltage conversion efficiency close to the theoretical limit. Using gallium oxide (Ga2O3), we successfully fabricate this phonon-assisted Ga2O3 PCSS, demonstrating a voltage conversion efficiency of 90.25% at an excitation laser energy of 1.98 mJ and a bias voltage of 600 V, as well as a conversion efficiency of 98.93% and a maximum output power density of 17.7 MW/cm2 at a bias voltage of 4000 V.
This work provides a new principle and technical route for designing and fabricating high-performance high-power photoconductive switches, significantly advancing the development of high-efficiency, high-power microwave systems.
