Heterogeneously integrated micro-ring with SnS₂ for dual-functional optical modulation and photodetection
基于SnS₂的异质集成微环，用于双功能光调制和光检测
SnS₂を用いたヘテロ統合マイクロリングによる二機能光学変調と光検出
SnS₂와 이종 통합된 마이크로 링을 이용한 이중 기능 광 변조 및 광 검출
Microanillo heterogéneamente integrado con SnS₂ para modulación óptica y fotodetección de doble funcionalidad
Micro-anneau hétérogènement intégré avec SnS₂ pour modulation optique et photodétection bifonctionnelles
Гетерогенно интегрированный микрополосковый резонатор с SnS₂ для двойной функции оптической модуляции и фотодетектирования
Jinyi Du 杜锦翼 ¹, Lidan Lu 鹿利单 ¹, Xu Zhang 张旭 ¹, Bofei Zhu 祝博飞 ², Wenbo Bo 薄文博 ¹, Yingjie Xu 徐英杰 ⁴, Guang Chen 陈光 ¹, Yanlin He 何彦霖 ¹, Guanghui Ren 任光辉 ³, Xiaoping Lou 娄小平 ¹, Zheng You 尤政 ², Lianqing Zhu 祝连庆 ¹
¹ School of Instrumentation Science and Opto-Electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China
中国 北京 北京信息科技大学仪器科学与光电工程学院
² The Department of precision instrument, Tsinghua University, Beijing 100084, China
中国 北京 清华大学精密仪器系
³ Integrated Photonics and Applications Centre (InPAC), RMIT University, Melbourne, Victoria 3000, Australia
⁴ School of Instrument Science and Opto-Electronics Engineering, Hefei University of Technology, Hefei 230009, China
中国 合肥 合肥工业大学仪器科学与光电工程学院
Achieving simultaneous optical modulation and photodetection in a single device represents a key objective for advancing integrated photonics. However, fabricating such dual-functional devices remains challenging due to process complexity, material instability, and weak light–matter interaction. This work demonstrates a dual-functional device through the heterogeneous integration of few-layer SnS₂ onto a silicon-on-insulator (SOI) microring resonator.
Using an electrode-engineered design that eliminates the need for external gate control or heterojunctions, the device achieves simultaneous light modulation and detection. This design not only simplifies fabrication but also maintains independent control ports, enabling real-time monitoring of the optical modulation state and paving the way for integrated feedback in on-chip photonic computing systems.
The modulator achieves a modulation depth of 23 dB, while the photodetector shows a responsivity of 0.38 A/W at −2 V through a hot-carrier-assisted mechanism. This work provides a compact and versatile platform for multifunctional photonic integration, supporting the development of more efficient and reliable on-chip photonic computing.
