MMM
YYYY
Finely regulated luminescent Ag-In-Ga-S quantum dots with green-red dual emission toward white light-emitting diodes
精细调节的发光Ag-In-Ga-S量子点,具有向白光发光二极管的绿红双发射
精細に調整された発光Ag−In−Ga−S量子ドットは、白色光発光ダイオードへの緑色赤色二重発光を有する
세밀하게 조절된 발광 Ag-In-Ga-S 양자점, 백광 발광 다이오드를 향한 녹색과 빨간색 이중 발사
Punto cuántico luminoso AG - in - GA - S finamente regulado, con doble emisión verde - Roja a LED de luz blanca
Point quantique Ag - in - GA - S lumineux finement régulé avec double émission vert - Rouge vers une diode électroluminescente blanche
Тщательно регулируемая светоизлучающая квантовая точка Ag - In - Ga - S с зелено - красным двойным излучателем светодиода белого света
Zhi Wu 吴智, Leimeng Xu 许蕾梦, Jindi Wang 王金迪, Jizhong Song 宋继中
Key Laboratory of Materials Physics of Ministry of Education, Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
中国 郑州 郑州大学物理学院 中原之光实验室 材料物理教育部重点实验室
Opto-Electronic Advances, 18 September 2024
Abstract

Ag-In-Ga-S (AIGS) quantum dots (QDs) have recently attracted great interests due to the outstanding optical properties and eco-friendly components, which are considered as an alternative replacement for toxic Pb- and Cd-based QDs. However, enormous attention has been paid to how to narrow their broadband spectra, ignoring the application advantages of the broadband emission.

In this work, the AIGS QDs with controllable broad green-red dual-emission are first reported, which is achieved through adjusting the size distribution of QDs by controlling the nucleation and growth of AIGS crystals. Resultantly, the AIGS QDs exhibit broad dual-emission at green- and red- band evidenced by photoluminescence (PL) spectra, and the PL relative intensity and peak position can be finely adjusted.

Furthermore, the dual-emission is the intrinsic characteristics from the difference in confinement effect of large particles and tiny particles confirmed by temperature-dependent PL spectra. Accordingly, the AIGS QDs (the size consists of 17 nm and 3.7 nm) with 530 nm and 630 nm emission could successfully be synthesized at 220 °C.

By combining the blue light-emitting diode (LED) chips and dual-emission AIGS QDs, the constructed white light-emitting devices (WLEDs) exhibit a continuous and broad spectrum like natural sunlight with the Commission Internationale de l’Eclairage (CIE) chromaticity coordinates of (0.33, 0.31), a correlated color temperature (CCT) of 5425 K, color rendering index (CRI) of 90, and luminous efficacy of radiation (LER) of 129 lm/W, which indicates that the AIGS QDs have huge potential for lighting applications.
Opto-Electronic Advances_1
Opto-Electronic Advances_2
Opto-Electronic Advances_3
Opto-Electronic Advances_4
Reviews and Discussions
https://www.hotpaper.io/index.html
Genetic algorithm assisted meta-atom design for high-performance metasurface optics
Physics and applications of terahertz metagratings
Surface-patterned chalcogenide glasses with high-aspect-ratio microstructures for long-wave infrared metalenses
Smart photonic wristband for pulse wave monitoring
Multifunctional mixed analog/digital signal processor based on integrated photonics
Three-dimensional multichannel waveguide grating filters
Ka-Band metalens antenna empowered by physics-assisted particle swarm optimization (PA-PSO) algorithm
Optical micro/nanofiber enabled tactile sensors and soft actuators: A review
Photonics-assisted THz wireless communication enabled by wide-bandwidth packaged back-illuminated modified uni-traveling-carrier photodiode
Highly sensitive and real-simultaneous CH4/C2H2 dual-gas LITES sensor based on Lissajous pattern multi-pass cell
Control of light–matter interactions in two-dimensional materials with nanoparticle-on-mirror structures
High performance micromachining of sapphire by laser induced plasma assisted ablation (LIPAA) using GHz burst mode femtosecond pulses



Previous Article                                Next Article
About
|
Contact
|
Copyright © Hot Paper